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mar. 2002 outline drawing dimensions in mm to-220f type name voltage class 3.2 0.2 1.3 max 0.8 2.54 13.5 min 3.6 5.0 1.2 8.5 10.5 max 5.2 4.5 23 1 2 1 3 1 2 3 t 1 terminal t 2 terminal gate terminal 17 2.54 2.8 0.5 2.6 ? measurement point of case temperature mitsubishi semiconductor ? triac ? bcr8pm medium power use insulated type, planar passivation type application switching mode power supply, light dimmer, electric flasher unit, control of household equipment such as tv sets ?stereo ?refrigerator ?washing machine ?infrared kotatsu ?carpet, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications bcr8pm ? t (rms) ........................................................................ 8a ? drm ....................................................................... 600v ? fgt ! , i rgt ! , i rgt # ............................................ 20ma ? iso ........................................................................ 2000v ul recognized: yellow card no.e80276(n) file no. e80271 ? 1. gate open. symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage conditions commercial frequency, sine full wave 360 conduction, t c =88 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value t a =25 c, ac 1 minute, t 1 ?t 2 ?g terminal to case unit a a a 2 s w w v a c c g v ratings 8 80 26 5 0.5 10 2 ?0 ~ +125 ?0 ~ +125 2.0 2000 symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v maximum ratings 12 600 720 refer to the page 6 as to the product guaranteed maximum junction temperature 150 c
mar. 2002 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c mitsubishi semiconductor ? triac ? bcr8pm medium power use insulated type, planar passivation type ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. the contact thermal resistance r th (c-f) in case of greasing is 0.5 c/w. ? 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c = 4.0a/ms 3. peak off-state voltage v d =400v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c, v drm applied t c =25 c, i tm =12a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c, v d =1/2v drm junction to case ? 3 t j =125 c unit ma v v v v ma ma ma v c/w v/ s typ. ! @ # ! @ # electrical characteristics limits min. 0.2 10 max. 2.0 1.5 1.5 1.5 1.5 20 20 20 3.7 performance curves refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 10 0 23 5710 1 40 20 23 5710 2 44 60 80 100 30 10 50 70 90 0 3.8 0.6 10 0 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? 3.4 3.0 2.6 2.2 1.8 1.4 1.0 t j = 125 c t j = 25 c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 4
mar. 2002 mitsubishi semiconductor ? triac ? bcr8pm medium power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 16 12 6 4 2 14 10 8 0 16 0 24 8 6 101214 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 i rgt i i fgt i i rgt iii 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 3 2 10 1 7 5 3 2 7 5 7 5 3 2 10 1 v gd = 0.2v p gm = 5w p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i i rgt i, i rgt iii 23 10 1 5710 0 23 5710 1 23 5710 2 3.5 3.0 2.5 2.0 1.5 1.0 0.5 4.0 0 23 10 2 5710 3 2 10 3 10 1 10 3 10 4 10 2 7 5 3 2 10 0 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 23 57 23 57 10 2 10 5 23 57 23 57 typical example gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) typical example maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/ w) conduction time (cycles at 60hz) gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance ( c/ w) conduction time (cycles at 60hz) no fins 360 conduction resistive, inductive loads gate characteristics ( , ? and ?? )
mar. 2002 mitsubishi semiconductor ? triac ? bcr8pm medium power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 160 120 100 60 20 0 3.2 0 0.4 1.2 2.0 2.8 40 80 140 0.8 1.6 2.4 160 120 100 60 20 0 16 0 2 6 10 14 40 80 140 4812 60 60 t2.3 120 120 t2.3 100 100 t2.3 140 40 40 60 20 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 10 1 160 40 0 40 80 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 160 120 100 60 20 0 16 0 2 6 10 14 40 80 140 4812 allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) curves apply regardless of conduction angle resistive, inductive loads natural convection all fins are black painted aluminum and greased curves apply regardless of conduction angle 360 conduction resistive, inductive loads allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature ( c) typical example natural convection no fins curves apply regardless of conduction angle resistive, inductive loads 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) laching current vs. junction temperature laching current (ma) junction temperature ( c) typical example holding current vs. junction temperature junction temperature ( c) t 2 + , g typical example t 2 + , g + t 2 , g ? ? ? typical example distribution 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c )
mar. 2002 mitsubishi semiconductor ? triac ? bcr8pm medium power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 160 100 80 40 20 0 140 60 120 60 20 20 60 100 140 40 0 40 80 120 23 10 0 5710 1 23 5710 2 7 5 3 2 10 1 7 7 5 3 2 10 0 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits typical example breakover voltage vs. junction temperature junction temperature ( c) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv// s ) breakover voltage ( dv/dt = 1v// s ) typical example t j = 125 c i quadrant iii quadrant 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c ) commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
mar. 2002 outline drawing dimensions in mm to-220f type name voltage class 3.2 0.2 1.3 max 0.8 2.54 13.5 min 3.6 5.0 1.2 8.5 10.5 max 5.2 4.5 23 1 2 1 3 1 2 3 t 1 terminal t 2 terminal gate terminal 17 2.54 2.8 0.5 2.6 ? measurement point of case temperature mitsubishi semiconductor ? triac ? bcr8pm medium power use insulated type, planar passivation type application switching mode power supply, light dimmer, electric flasher unit, control of household equipment such as tv sets stereo refrigerator washing machine infrared kotatsu carpet, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications (warning) 1. refer to the recommended circuit values around the triac before using. 2. be sure to exchange the specification before using. if not exchanged, general triacs will be supplied. bcr8pm i t (rms) ........................................................................ 8a v drm ....................................................................... 600v i fgt ! , i rgt ! , i rgt # ............................................ 20ma v iso ........................................................................ 2000v ul recognized: yellow card no.e80276(n) file no. e80271 ? 1. gate open. symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage conditions commercial frequency, sine full wave 360 conduction, t c =113 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value t a =25 c, ac 1 minute, t 1 t 2 g terminal to case unit a a a 2 s w w v a c c g v ratings 8 80 26 5 0.5 10 2 40 ~ +150 40 ~ +150 2.0 2000 symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v maximum ratings 12 600 720 the product guaranteed maximum junction temperature 150 c (see warning.)
mar. 2002 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c mitsubishi semiconductor ? triac ? bcr8pm medium power use insulated type, planar passivation type ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. the contact thermal resistance r th (c-f) in case of greasing is 0.5 c/w. ? 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c/150 c 2. rate of decay of on-state commutating current (di/dt) c = 4.0a/ms 3. peak off-state voltage v d =400v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =150 c, v drm applied t c =25 c, i tm =12a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c/150 c, v d =1/2v drm junction to case ? 3 t j =125 c/150 c unit ma v v v v ma ma ma v c/w v/ s typ. ! @ # ! @ # electrical characteristics limits min. 0.2/0.1 10/1 max. 2.0 1.5 1.5 1.5 1.5 20 20 20 3.7 performance curves the product guaranteed maximum junction temperature 150 c (see warning.) 0.5 1.5 2.5 3.5 1.0 2.0 3.0 4.0 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 t j = 25 c t j = 150 c 10 0 23 5710 1 40 20 23 5710 2 44 60 80 100 30 10 50 70 90 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 4
mar. 2002 mitsubishi semiconductor ? triac ? bcr8pm medium power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 16 12 6 4 2 14 10 8 0 16 0 24 8 6 101214 10 1 10 3 7 5 3 2 10 2 7 5 4 4 3 2 60 20 20 60 100 160 140 40 0 40 80 120 23 10 1 5710 0 23 5710 1 23 5710 2 3.5 3.0 2.5 2.0 1.5 1.0 0.5 4.0 0 23 10 2 5710 3 23 5 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 3 2 10 1 7 5 3 2 7 5 7 5 3 2 10 1 v gd = 0.1v p gm = 5w p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i i rgt i, i rgt iii 10 3 10 1 10 3 10 4 10 2 7 5 3 2 10 0 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 23 57 23 57 10 2 10 5 23 57 23 57 0 40 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 80 120 i rgt i i fgt i i rgt iii typical example gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) typical example maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/ w) conduction time (cycles at 60hz) gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance ( c/ w) conduction time (cycles at 60hz) no fins 360 conduction resistive, inductive loads gate characteristics ( , ? and ?? )
mar. 2002 mitsubishi semiconductor ? triac ? bcr8pm medium power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 3.2 2.8 2.4 160 120 100 60 20 0 0 0.4 1.2 2.0 40 80 140 0.8 1.6 10 3 7 5 3 2 10 2 10 4 7 5 3 2 10 5 7 5 3 2 10 6 7 5 3 2 60 20 20 60 100 160 140 40 0 40 80 120 10 3 5 7 3 2 5 4 4 7 3 2 10 2 10 1 60 20 20 60 100 160 140 40 0 40 80 120 160 40 0 40 80 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 160 120 100 60 20 0 16 0 2 6 10 14 40 80 140 4812 160 120 100 60 20 0 16 0 2 6 10 14 40 80 140 4812 60 60 t2.3 120 120 t2.3 100 100 t2.3 allowable ambient temperature vs. rms on-state current rms on-state current (a) curves apply regardless of conduction angle resistive, inductive loads natural convection all fins are black painted aluminum and greased curves apply regardless of conduction angle 360 conduction resistive, inductive loads allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature ( c) ambient temperature ( c) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature ( c) typical example 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) naturalconvection no fins,curves apply regardless of conduction angle resistive, inductive loads laching current vs. junction temperature laching current (ma) junction temperature ( c) typical example holding current vs. junction temperature junction temperature ( c) t 2 + , g typical example t 2 + , g + t 2 , g ? ? ? typical example distribution 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c )
mar. 2002 mitsubishi semiconductor ? triac ? bcr8pm medium power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i 160 100 80 40 20 0 140 60 120 60 20 20 60 100 160 140 40 0 40 80 120 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 7 5 3 2 10 0 23 5710 1 10 1 7 7 5 3 2 23 5710 2 10 0 7 5 3 2 10 0 23 5710 1 10 1 7 7 5 3 2 23 5710 2 10 0 typical example breakover voltage vs. junction temperature junction temperature ( c) breakover voltage vs. rate of rise of off-state voltage (t j = 125 c) rate of rise of off-state voltage (v/ s) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 125 c i quadrant iii quadrant breakover voltage vs. rate of rise of off-state voltage (t j = 150 c) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 150 c i quadrant iii quadrant 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c ) commutation characteristics (t j = 125 c) commutation characteristics (t j = 150 c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t j = 150 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example
mar. 2002 mitsubishi semiconductor ? triac ? bcr8pm medium power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) c 1 c 1 = 0.1~0.47 f r 1 = 47~100 ? c 0 = 0.1 f r 0 = 100 ? c 0 r 0 r 1 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v load recommended circuit values around the triac test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits

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